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  surface mount voidless- hermetically-sealed ultra fast re co very g la ss re c tifier s www. microsemi . com scottsdale division 1N5807CBUS thru 1n5811cbus 1N5807CBUS?1n5811cbus description appearance this ?ultrafast recovery? surface mount rectifie r diode series is military qualified to mil- prf-19500/742 and is ideal for high-reliabilit y applications where a failure cannot be tolerated. these industry-recognized 6.0 am p rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal ?category iii? metallurgical bond. these devices are also available in axial- leaded package configurations (see separate data sheet for 1n5807cb thru 1n5811cb). microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time spee d requirements including standard, fast, and ultrafast device types in both through-hole and surface mount packages. package ?e? or d-5b important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? surface mount package series equivalent to the jedec registered 1n5807 to 1n5811 series ? voidless-hermetically-sealed glass package ? extremely robust construction ? triple-layer passivation ? internal ? category iii? metallurgical bonds ? jan, jantx, & jantxv av ailable per mil-prf-19500/742 ? further screening options are available for jans in accordance with mil-prf-19500/742 by using a ?sp? prefix ? axial-leaded equivalents also available (see separate data sheet for 1n5807cb thru 1n5811cb) ? ultrafast recovery 6 amp rectifier series 50 to 150v ? military and other high-reliability applications ? switching power supplies or other applications requiring extremely fast switching & low forward loss ? high forward surge current capability ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? operating temperature: -65 o c to +175 o c. ? storage temperature: -65 o c to +175 o c. ? average rectified forward current (i o ): 6 amps @ t ec = 75oc end cap temperature (see note 1) ? thermal resistance: 6.5 oc/w junction to end cap ? thermal impedance: 1.5 oc/w @ 10 ms heating time ? forward surge current (8.3 ms half sine) 125 amps ? capacitance: 60 pf at 10 volts, f = 1 mhz ? solder temperature: 260oc for 10 s (maximum) ? case: hermetically se aled voidless hard glass with tungsten slugs ? terminals: end caps are copper with tin/lead (sn/pb) finish. ? marking & polarity: cathode band only ? tape & reel option: standard per eia-481-b ? weight: 539 mg ? see package dimensions and recommended pad layout on last page electrical characteristics type working peak reverse voltage v rwm breakdown voltage (min.) @ 100 a v br average rectified current i o1 @t ec =75 o c (note 1) average rectified current i o2 @t a =55 o c (note 2) maximum forward voltage @ 4 a (8.3 ms pulse) v f reverse current (max) @ v rwm i r surge current (max) i fsm (note 3) reverse recovery time (max) (note 4) t rr volts volts amps amps volts a amps ns 2 5 o c 100 o c 25 o c 125 o c 1N5807CBUS 1n5809cbus 1n5811cbus 50 100 150 60 110 160 6.0 6.0 6.0 3.0 3.0 3.0 0.875 0.875 0.875 0.800 0.800 0.800 5 5 5 525 525 525 125 125 125 30 30 30 note 1: rated at t ec = 75oc. derate at 60 ma/oc for t ec above 75oc note 2: derate linearly at 25 ma/oc above t a = 55oc. this rating is typical for pc boards wh ere thermal resistance from mounting point to ambient is sufficiently controlled where t j(max) does not exceed 175oc note 3: t a = 25 o c @ i o = 3.0 a and v rwm for ten 8.3 ms surges at 1 minute intervals microsemi scottsdale division page 1 note 4: i f = 1.0 a, i rm = 1.0 a, i r(rec) = 0.10 a and di/dt = 100 a/s min copyright ? 2007 7-26-2007 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
surface mount voidless- hermetically-sealed ultra fast re co very g la ss re c tifier s www. microsemi . com scottsdale division 1N5807CBUS thru 1n5811cbus 1N5807CBUS?1n5811cbus symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be app lied over the operating temperature range. v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current. i r maximum leakage current: the maximum leakage curre nt that will flow at the specified voltage and temperature. c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage t rr reverse recovery time: the time interval betwe en the instant the current passes through zero when changing from the forward direction to the reverse di rection and a specified recovery decay point after a peak reverse current is reached. graphs figure 1 figure 2 typical forward current typi cal reverse current vs. voltage vs. forward voltage figure 3 forward pulse current vs. duration microsemi scottsdale division page 2 copyright ? 2007 7-26-2007 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
surface mount voidless- hermetically-sealed ultra fast re co very g la ss re c tifier s www. microsemi . com scottsdale division 1N5807CBUS thru 1n5811cbus 1N5807CBUS?1n5811cbus figure 4 multiple surge current vs. duration package dimensions and pad layout note: this package outline has also previously pad layout been identified as ?d-5b? inches mm a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 note: if mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. inches mm min max min max bl .205 .225 5.21 5.72 bd .137 .142 3.48 3.61 ect .019 .028 0.48 0.711 s .003 --- 0.08 --- microsemi scottsdale division page 3 copyright ? 2007 7-26-2007 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503


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